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PDF IPT004N03L Data sheet ( Hoja de datos )
| Número de pieza | IPT004N03L | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-MOSFET,30V
IPT004N03L
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
1 page  
OptiMOSTMPower-MOSFET,30V
IPT004N03L
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RG
gfs
Min.
30
0.7
-
-
-
-
-
1.4
160
Values
Typ. Max.
--
- 2.2
0.1 10
10 100
10 100
0.44 0.5
0.37 0.4
2.7 5.4
320 -
Unit Note/TestCondition
V VGS=0V,ID=10mA
V VDS=VGS,ID=250µA
µA
VDS=30V,VGS=0V,Tj=25°C
VDS=30V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
mΩ
VGS=4.5V,ID=150A
VGS=10V,ID=150A
Ω-
S |VDS|>2|ID|RDS(on)max,ID=30A
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Ciss
Coss
Crss
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
-
-
-
-
Values
Unit
Typ. Max.
18000 24000 pF
5400 7200 pF
590 -
pF
30 -
ns
17 -
ns
149 -
ns
37 -
ns
Note/TestCondition
VGS=0V,VDS=15V,f=1MHz
VGS=0V,VDS=15V,f=1MHz
VGS=0V,VDS=15V,f=1MHz
VDD=15V,VGS=10V,ID=30A,
RG,ext=1.6Ω
VDD=15V,VGS=10V,ID=30A,
RG,ext=1.6Ω
VDD=15V,VGS=10V,ID=30A,
RG,ext=1.6Ω
VDD=15V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Table6Gatechargecharacteristics1)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
Qgs
Qg(th)
Qgd
Qsw
Qg
Vplateau
Qg
Qg(sync)
Qoss
Min.
-
-
-
-
-
-
-
-
-
Values
Typ. Max.
40 53
29 -
28 36
38 -
122 163
2.2 -
252 336
105 -
141 188
Unit Note/TestCondition
nC VDD=15V,ID=30A,VGS=0to4.5V
nC VDD=15V,ID=30A,VGS=0to4.5V
nC VDD=15V,ID=30A,VGS=0to4.5V
nC VDD=15V,ID=30A,VGS=0to4.5V
nC VDD=15V,ID=30A,VGS=0to4.5V
V VDD=15V,ID=30A,VGS=0to4.5V
nC VDD=15V,ID=30A,VGS=0to10V
nC VDS=0.1V,VGS=0to4.5V
nC VDD=15V,VGS=0V
1) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
5
Rev.2.0,2014-10-08
5 Page 
6PackageOutlines
OptiMOSTMPower-MOSFET,30V
IPT004N03L
1) partially covered with Mold Flash
MILLIMETERS
DIM
MIN MAX
A 2.20 2.40
b 0.70 0.90
b1 9.70 9.90
b2 0.42 0.50
c 0.40 0.60
D
10.28
10.58
D2 3.30
E 9.70 10.10
E1 7.50
E4 8.50
E5 9.46
e 1.20 (BSC)
H
11.48
11.88
H1 6.55 6.75
H2 7.15
H3 3.59
H4 3.26
N8
K1 4.18
L 1.60 2.10
L1 0.70
L2 0.60
L4 1.00 1.30
Figure1OutlinePG-HSOF-8-1
Final Data Sheet
INCHES
MIN MAX
0.087
0.094
0.028
0.035
0.382
0.390
0.017
0.020
0.016
0.024
0.405
0.416
0.130
0.382
0.398
0.295
0.335
0.372
0.047 (BSC)
0.452
0.468
0.258
0.266
0.281
0.141
0.128
8
0.165
0.063
0.083
0.028
0.024
0.039
0.051
11
DOCUMENT NO.
Z8B00169619
SCALE 0
2
02
4mm
EUROPEAN PROJECTION
ISSUE DATE
20-02-2014
REVISION
02
Rev.2.0,2014-10-08
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IPT004N03L.PDF ] | |
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