(PDF) CJD04N65A Datasheet - N-Channel Power MOSFET / Transistor

Número de pieza	CJD04N65A
Descripción	N-Channel Power MOSFET / Transistor
Fabricantes	ZPSEMI
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No Preview Available ! CJD04N65A TO-251-3L Plastic-Encapsulate MOSFETS CJD04N65A N-Channel Power MOSFET GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified TO-251-3L 1. GATE 2. DRAIN 3. SOURCE Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy (note1) Power Dissipation Thermal Resistance from Junction to Ambient Operating and Storage Temperature Range Maximum lead temperure for soldering purposes , 1/8”from case for 5 seconds Symbol VDS VGSS ID IDM EAS PD RθJA TJ, TSTG TL Value 650 ±30 4.0 16 280 1.25 100 -55 ~+150 260 Unit V A mJ W ℃/W ℃ [email protected] www.zpsemi.com 1 of 2 1 page

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PDF CJD04N65A Data sheet ( Hoja de datos )