(PDF) CJD04N60B Datasheet - N-Channel Power MOSFET / Transistor

Número de pieza	CJD04N60B
Descripción	N-Channel Power MOSFET / Transistor
Fabricantes	ZPSEMI
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No Preview Available ! CJD04N60B TO-251S Plastic-Encapsulate MOSFETS CJD04N60B 600V N-Channel Power MOSFET General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently.This new high energy device also offers a drain-to-source diode wigh fast recovery time.Desighed for high voltage,high speed switching applications such as power supplies,converters,power motor controls and bridge circuits. TO-251S 1. GATE 2. DRAIN 3. SOURCE FEATURE z High Current Rating z Lower Rds(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy (note1) Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range Maximum Lead Temperure for Soldering Purposes , 1/8”from Case for 5 Seconds Symbol VDS VGS ID IDM EAS RθJA TJ TSTG TL Value 600 ±30 4.0 16 260 100 150 -55 ~+150 260 Unit V A mJ ℃/W ℃ [email protected] www.zpsemi.com 1 of 3 1 page

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PDF CJD04N60B Data sheet ( Hoja de datos )