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Número de pieza | CJD02N60 | |
Descripción | N-Channel MOSFET | |
Fabricantes | JCET | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CJD02N60 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251S Plastic-Encapsulate MOSFETS
CJD02N60 N-Channel Power MOSFET
V(BR)DSS
600V
RDS(on)MAX
4.4Ω@10V
ID
2A
TO-251S
General Description
The high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage-blocking capability without degrading
performance over time. In addition , this advanced MOSFET is designed
1. GATE
2. DRAIN
to withstand high energy in avalanche and commutation modes . The 3. SOURCE
new energy efficient design also offers a drain-to-source diode with a
12
fast recovery time. Designed for high voltage, high speed switching
applications in power suppliers, converters and PWM motor controls ,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage transients.
FEATURES
z Robust High Voltage Termination
z Avalanche Energy Specified
z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
z Diode is Characterized for Use in Bridge Circuits
z IDSS and VDS(on) Specified at Elevated Temperature
MARKING
EQUIVALENT CIRCUIT
3
CJD02N60
z XXX
CJD02N60 = Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±20
Continuous Drain Current
ID 2
Pulsed Drain Current
IDM 8
Single Pulsed Avalanche Energy*
EAS 128
Power Dissipation
PD 1.25
Thermal Resistance from Junction to Ambient
RθJA
100
Junction Temperature
TJ 150
Storage Temperature
Tstg -50 ~+150
*EAS condition: Tj=25℃,VDD=50V,L=64mH,IAS=2A,RG=25Ω, Starting TJ = 25°C
www.cj-elec.com
1
Unit
V
A
mJ
W
℃/W
℃
F,May,2016
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet CJD02N60.PDF ] |
Número de pieza | Descripción | Fabricantes |
CJD02N60 | N-Channel MOSFET | JCET |
CJD02N60 | N-Channel Power MOSFET / Transistor | ZPSEMI |
CJD02N65 | N-Channel MOSFET | JCET |
CJD02N65 | N-Channel Power MOSFET / Transistor | ZPSEMI |
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