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PDF 2N7002W Data sheet ( Hoja de datos )
| Número de pieza | 2N7002W | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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October 2007
2N7002W
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant
D
G
SOT - 323
Marking : 2N
S
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
VDSS
VDGR
VGSS
Drain-Source Voltage
Drain-Gate Voltage RGS ≤ 1.0MΩ
Gate-Source Voltage
Continuous
Pulsed
60
60
±20
±40
ID Drain Current
Continuous
Continuous @ 100°C
Pulsed
115
73
800
TJ , TSTG
Junction and Storage Temperature Range
-55 to +150
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Units
V
V
V
mA
°C
Thermal Characteristics
Symbol
Parameter
PD Total Device Dissipation
Derating above TA = 25°C
RθJA
Thermal Resistance, Junction to Ambient *
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimun land pad size,
Value
200
1.6
625
Units
mW
mW/°C
°C/W
© 2007 Fairchild Semiconductor Corporation
2N7002W Rev. A
1
www.fairchildsemi.com
1 page  
Package Dimensions
SOT323
© 2007 Fairchild Semiconductor Corporation
2N7002W Rev. A
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2N7002W.PDF ] | |
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