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PDF 2N7002KW Data sheet ( Hoja de datos )
| Número de pieza | 2N7002KW | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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May 2011
2N7002KW
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Pb Free/RoHS Compliant
• ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101
D
S
G SOT-323
Marking : 7KW
Absolute Maximum Ratings * TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current
- Continuous
TJ = 100°C
- Pulsed
60
±20
310
195
1.2
V
V
mA
mA
A
TJ
TSTG
Operating Junction Temperature Range
Storage Temperature Range
-55 to +150
-55 to +150
°C
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
Parameter
Value
PD
RθJA
Total Device Dissipation
Derating above TA = 25°C
Thermal Resistance, Junction to Ambient *
300
2.4
410
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size
Units
mW
mW/°C
°C/W
© 2011 Fairchild Semiconductor Corporation
2N7002KW Rev. A0
1
www.fairchildsemi.com
1 page  
Physical Dimensions
SOT-323
2.00±0.20
1.25±0.10
1.00±0.10
2.10±0.10
0.275±0.100
3°
0.90
0.95±0.15 ±0.10
+0.05
0.05 –0.02
1.30±0.10
3°
+0.04
0.135 –0.01
0.10 Min
© 2011 Fairchild Semiconductor Corporation
2N7002KW Rev. A0
5
Dimensions in Millimeters
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2N7002KW.PDF ] | |
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