DataSheet.es    


PDF IGB30N60H3 Data sheet ( Hoja de datos )

Número de pieza IGB30N60H3
Descripción IGBT
Fabricantes Infineon 
Logotipo Infineon Logotipo



Hay una vista previa y un enlace de descarga de IGB30N60H3 (archivo pdf) en la parte inferior de esta página.


Total 14 Páginas

No Preview Available ! IGB30N60H3 Hoja de datos, Descripción, Manual

IGBT
HighspeedIGBTinTrenchandFieldstoptechnology
IGB30N60H3
600Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl

1 page




IGB30N60H3 pdf
IGB30N60H3
Highspeedswitchingseriesthirdgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Cies
Coes
Cres
Gate charge
QG
Short circuit collector current
Max. 1000 short circuits
IC(SC)
Time between short circuits: 1.0s
VCE=25V,VGE=0V,f=1MHz
VCC=480V,IC=30.0A,
VGE=15V
VGE=15.0V,VCC400V,
tSC5µs
Tvj=150°C
min.
Value
typ.
max. Unit
- 1630 -
- 107 - pF
- 50 -
- 165.0 - nC
- -A
160
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=30.0A,
VGE=0.0/15.0V,
rG=10.5,Lσ=95nH,
Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IKW30N60H3) reverse
recovery.
min.
Value
typ.
max. Unit
- 18 - ns
- 22 - ns
- 207 - ns
- 22 - ns
- 0.73 - mJ
- 0.44 - mJ
- 1.17 - mJ
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=175°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=175°C,
VCC=400V,IC=30.0A,
VGE=0.0/15.0V,
rG=10.5,Lσ=95nH,
Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IKW30N60H3) reverse
recovery.
Value
Unit
min. typ. max.
- 18 - ns
- 22 - ns
- 239 - ns
- 23 - ns
- 0.95 - mJ
- 0.60 - mJ
- 1.55 - mJ
5 Rev.2.3,2014-03-11

5 Page





IGB30N60H3 arduino
IGB30N60H3
Highspeedswitchingseriesthirdgeneration
1
D=0.5
0.2
0.1 0.1
0.05
0.02
0.01
single pulse
0.01
0.001
1E-6
i: 1
234
ri[K/W]: 0.05279329 0.1938242 0.2577884 0.2956575
τi[s]: 6.5E-5
4.7E-4
6.1E-3
0.06477749
1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 21. IGBTtransientthermalimpedance
(D=tp/T)
11 Rev.2.3,2014-03-11

11 Page







PáginasTotal 14 Páginas
PDF Descargar[ Datasheet IGB30N60H3.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IGB30N60H3IGBTInfineon
Infineon

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar