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PDF 8N60 Data sheet ( Hoja de datos )
| Número de pieza | 8N60 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | nELL | |
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SEMICONDUCTOR
8N60 Series RRooHHSS
Nell High Power Products
DESCRIPTION
N-Channel Power MOSFET
(8A, 600Volts)
The Nell 8N60 is a three-terminal silicon
device with current conduction capability of 8A,
fast switching speed, low on-state resistance,
breakdown voltage rating of 600V ,and max.
threshold voltage of 4 volts.
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits,
and general purpose switching applications .
FEATURES
RDS(ON) = 1.2Ω @ VGS = 10V
Ultra low gate charge(36nC max.)
Low reverse transfer capacitance
(CRSS = 12pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
PRODUCT SUMMARY
ID (A)
8
VDSS (V)
600
RDS(ON) (Ω)
1.2 @ VGS = 10V
QG(nC) max.
36
D
GDS
TO-220AB
(8N60A)
D
G
S
TO-263(D2PAK)
(8N60H)
GDS
TO-220F
(8N60AF)
D (Drain)
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
VDGR
Drain to Source voltage
Drain to Gate voltage
TJ=25°C to 150°C
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C
TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
IAR=8A, RGS=50Ω, VGS=10V
EAS Single pulse avalanche energy(Note 2)
IAS=8A, L=7.1mH
dv/dt
Peak diode recovery dv/dt(Note 3)
PD Total power dissipation
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS = 8A, VDD = 50V, L = 7.1mH, RGS = 25Ω, starting TJ=25°C.
3.ISD ≤ 7.5A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, starting TJ=25°C.
TO-220AB/TO-263
TC=25°C
TO-220F
1.6mm from case
www.nellsemi.com
Page 1 of 7
VALUE
600
600
±30
8
5
32
8
14.7
230
4.5
150
48
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
V /ns
W
ºC
lbf.in (N.m)
1 page  
SEMICONDUCTOR
8N60 Series RRooHHSS
Nell High Power Products
Fig.11 Transient thermal response curve
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
10-5
Single pulse
Notes:
1.Rth(j-c)(t)=0.85°C/W Max.
2.Duty factor, D=t1/t2
3.TJM-Tc=PDM×Rth(j-c)(t)
10-4 10-3 10-2 10-1 100 101
Square wave pulse duration, T1(sec)
■ TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
Fig.1B Peak diode recovery dv/dt waverforms
D.U.T.
+
-
+
VDS
-
L
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* lSD controlled by pulse period
* D.U.T.-Device under test
VDD
Fig.2A Switching test circuit
VDS
VGS
RG
10V
Pulse Width ≤ 1µs
Duty Factor ≤ 0.1%
RL
D.U.T.
VDD
VGS
(Driver)
lSD
(D.U.T.)
VDS
(D.U.T.)
P.W.
Period
D= P.W.
Period
VGS=10V
lFM, Body Diode forward current
di/dt
lRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Fig.2B Switching Waveforms
VDS
90%
10%
VGS
td(ON)
tR
td(OFF)
tF
www.nellsemi.com
Page 5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 8N60.PDF ] | |
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