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Número de pieza | IPN60R1K0CE | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPN60R1K0CE (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! IPN60R1K0CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
Adapter,ChargerandLighting
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Qg,typ
ID,pulse
Eoss@400V
Body diode di/dt
650
1
13
11.8
1.3
500
V
Ω
nC
A
µJ
A/µs
Type/OrderingCode
IPN60R1K0CE
Package
PG-SOT223
Marking
60S1K0
PG-SOT223
Gate
Pin 1
Drain
Pin 2
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-04-29
1 page 600VCoolMOSªCEPowerTransistor
IPN60R1K0CE
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
VSD
trr
Qrr
Irrm
Min.
-
-
-
-
Values
Typ. Max.
0.9 -
220 -
1.5 -
12 -
Unit Note/TestCondition
V VGS=0V,IF=1.9A,Tf=25°C
ns VR=400V,IF=1.9A,diF/dt=100A/µs
µC VR=400V,IF=1.9A,diF/dt=100A/µs
A VR=400V,IF=1.9A,diF/dt=100A/µs
Final Data Sheet
5 Rev.2.0,2016-04-29
5 Page 600VCoolMOSªCEPowerTransistor
IPN60R1K0CE
6PackageOutlines
MILLIMETERS
INCHES
DIM
MIN MAX
MIN MAX
A
1.52 1.80
0.060
0.071
A1 -
0.10 -
0.004
A2
1,50
1.70
0.059
0.067
b
0.60
0.80
0.024
0.031
b2
2.95
3.10
0.116
0.122
c
0.24
0.32
0.009
0.013
D
6.30
6.70
0.248
0.264
E
6.70
7.30
0.264
0.287
E1
3.30
3.70
0.130
0.146
e 2.3 BASIC
0.091 BASIC
e1 4.6 BASIC
0.181 BASIC
L
0.75
1.10
0.030
0.043
N3
3
O
Figure1OutlinePG-SOT223,dimensionsinmm/inches
Final Data Sheet
11
DOCUMENT NO.
Z8B00180553
SCALE
0
2.5
0 2.5
5mm
EUROPEAN PROJECTION
ISSUE DATE
24-02-2016
REVISION
01
Rev.2.0,2016-04-29
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet IPN60R1K0CE.PDF ] |
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IPN60R1K0CE | MOSFET ( Transistor ) | Infineon |
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