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PDF IPL60R185C7 Data sheet ( Hoja de datos )
| Número de pieza | IPL60R185C7 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
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IPL60R185C7
MOSFET
600VCoolMOSªC7PowerTransistor
CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ
MOSFETsupplierwithhighclassinnovation.
The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm².
Features
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
•IncreasedMOSFETdv/dtruggednessto120V/ns
•IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
•BestinclassRDS(on)/package
•SMDpackagewithverylowparasiticinductanceforeasydevicecontrol
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
•4pinkelvinsourceconcept
Benefits
•IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe
application
•Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency
•Enablinghighersystemefficiencybylowerswitchinglosses
•Increasedpowerdensitysolutionsduetosmallerpackages
•OptimizedPCBassemblyandlayoutsolutions
•Suitableforapplicationssuchasserver,telecomandsolar
•Upto0.5%betterfullloadefficiency@100kHzcomparedtoconventional
3pinpackage
Applications
PFCstagesandPWMstages(TTF,LLC)forhighpower/performance
SMPSe.g.Computing,Server,Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
RDS(on),max
185
Qg.typ
24
ID,pulse
45
ID,continuous @ Tj<150°C 21
V
mΩ
nC
A
A
Eoss@400V
2.7
µJ
Body diode di/dt
400
A/µs
Type/OrderingCode
IPL60R185C7
Package
PG-VSON-4
Marking
60C7185
Final Data Sheet
1
ThinPAK8x8
Drain
Pin 5
Gate
Pin 1
Driver
Source
Pin 2
Power
Source
Pin 3,4
RelatedLinks
see Appendix A
Rev.2.0,2015-12-11
1 page  
600VCoolMOSªC7PowerTransistor
IPL60R185C7
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V(BR)DSS
V(GS)th
IDSS
IGSS
RDS(on)
RG
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance, energy
related1)
Effective output capacitance, time
related2)
Turn-on delay time
Ciss
Coss
Co(er)
Co(tr)
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
600
3
-
-
-
-
-
-
Values
Typ. Max.
--
3.5 4
-1
10 -
- 100
0.159 0.185
0.356 -
0.85 -
Unit
V
V
µA
nA
Ω
Ω
Note/TestCondition
VGS=0V,ID=1mA
VDS=VGS,ID=0.26mA
VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
VGS=20V,VDS=0V
VGS=10V,ID=5.3A,Tj=25°C
VGS=10V,ID=5.3A,Tj=150°C
f=1MHz,opendrain
Min.
-
-
-
Values
Typ. Max.
1080 -
18 -
34 -
Unit Note/TestCondition
pF VGS=0V,VDS=400V,f=250kHz
pF VGS=0V,VDS=400V,f=250kHz
pF VGS=0V,VDS=0...400V
- 349 - pF ID=constant,VGS=0V,VDS=0...400V
-
9-
ns
VDD=400V,VGS=13V,ID=5.3A,
RG=10Ω;seetable9
-
4-
ns
VDD=400V,VGS=13V,ID=5.3A,
RG=10Ω;seetable9
-
46 -
ns
VDD=400V,VGS=13V,ID=5.3A,
RG=10Ω;seetable9
-
6-
ns
VDD=400V,VGS=13V,ID=5.3A,
RG=10Ω;seetable9
Min.
-
-
-
-
Values
Typ. Max.
5-
8-
24 -
5.0 -
Unit Note/TestCondition
nC VDD=400V,ID=5.3A,VGS=0to10V
nC VDD=400V,ID=5.3A,VGS=0to10V
nC VDD=400V,ID=5.3A,VGS=0to10V
V VDD=400V,ID=5.3A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
Final Data Sheet
5
Rev.2.0,2015-12-11
5 Page 
600VCoolMOSªC7PowerTransistor
IPL60R185C7
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Diode recovery waveform
V,I
VDS( peak)
VDS
IF
dIF / dt
Irrm
VDS
trr
tF tS
IF t
QF QS
10 %Irrm
dIrr / dt Qtrrrr ==tFQ+F t+S QS
Table9switchingtimes(ss)
Switching times test circuit for inductive load
VGS
VDS
VDS
VGS
Switching times waveform
90%
10%
td(on) tr
ton
td(off) tf
toff
Table10Unclampedinductiveload(ss)
Unclamped inductive load test circuit
ID VDS
Unclamped inductive waveform
V(BR)DS
VDS
ID
VDS
Final Data Sheet
11 Rev.2.0,2015-12-11
11 Page | ||
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