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Número de pieza | IPB114N03LG | |
Descripción | Power-Transistor | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPB114N03LG (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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OptiMOS™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
IPP114N03L G
IPB114N03L G
Product Summary
V DS
R DS(on),max
ID
IPP114N03L G
IPB114N03L G
30 V
11.4 mΩ
30 A
Package
Marking
PG-TO220-3-1
114N03L
PG-TO263-3
114N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Pulsed drain current2)
Avalanche current, single pulse3)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) J-STD20 and JESD22
Rev. 2.0
I D,pulse
I AS
E AS
dv /dt
V GS
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
T C=25 °C
T C=25 °C
I D=12 A, R GS=25 Ω
I D=30 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=175 °C
page 1
Value
30
30
30
26
210
30
30
6
±20
Unit
A
mJ
kV/µs
V
2010-03-01
1 page 5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
120
10 V
5V
80
40
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
90
80
70
60
50
40
30
20
10 175 °C
25 °C
0
0123
V GS [V]
Rev. 2.0
IPP114N03L G
IPB114N03L G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
28
4.5 V
3.2 V
24 3.5 V
20
4V
4.5 V
16
4V
12
3.5 V
3.2 V
3V
2.8 V
3
8
4
0
0 20 40 60
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
10 V
5V
11.5 V
80 100
80
60
40
20
45
0
0 20 40 60 80 100
I D [A]
page 5
2010-03-01
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IPB114N03LG.PDF ] |
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IPB114N03LG | Power-Transistor | Infineon |
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