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PDF IPD65R400CE Data sheet ( Hoja de datos )
| Número de pieza | IPD65R400CE | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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IPD65R400CE,IPS65R400CE
MOSFET
650VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEseriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheresultingdevicesprovideallbenefitsofafastswitchingSuperjunction
MOSFETwhilenotsacrificingeaseofuse.Extremelylowswitchingand
conductionlossesmakeswitchingapplicationsevenmoreefficient,more
compact,lighterandcooler.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•JEDECqualfied,Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorLighting
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
DPAK
tab
2
1
3
IPAKSL
tab
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
700
V
RDS(on),max
400
mΩ
ID. 15.1 A
Qg.typ
39
nC
ID,pulse
30
A
Eoss@400V
2.8
µJ
Type/OrderingCode
IPD65R400CE
IPS65R400CE
Package
PG-TO 252
PG-TO 251
Marking
65S400CE
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-02-23
1 page  
650VCoolMOSªCEPowerTransistor
IPD65R400CE,IPS65R400CE
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V(BR)DSS
V(GS)th
IDSS
IGSS
RDS(on)
RG
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance,
energy related1)
Effective output capacitance,
time related2)
Turn-on delay time
Ciss
Coss
Co(er)
Co(tr)
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
650
2.5
-
-
-
-
-
-
Values
Typ. Max.
--
3.0 3.5
-1
10 -
- 100
0.36 0.40
0.94 -
7.5 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=0.32mA
µA
VDS=650,VGS=0V,Tj=25°C
VDS=650,VGS=0V,Tj=150°C
nA VGS=20V,VDS=0V
Ω
VGS=10V,ID=3.2435A,Tj=25°C
VGS=10V,ID=3.2435A,Tj=150°C
Ω f=1MHz,opendrain
Min.
-
-
-
Values
Typ. Max.
710 -
41 -
32 -
Unit Note/TestCondition
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=0...480V
- 140 - pF ID=constant,VGS=0V,VDS=0...480V
-
10 -
ns
VDD=400V,VGS=13V,ID=4.86525A,
RG=4.9Ω;seetable9
-
7-
ns
VDD=400V,VGS=13V,ID=4.86525A,
RG=4.9Ω;seetable9
-
57 -
ns
VDD=400V,VGS=13V,ID=4.86525A,
RG=4.9Ω;seetable9
-
8-
ns
VDD=400V,VGS=13V,ID=4.86525A,
RG=4.9Ω;seetable9
Min.
-
-
-
-
Values
Typ. Max.
4-
20 -
39 -
5.5 -
Unit Note/TestCondition
nC
VDD=480V,ID=4.86525A,VGS=0to
10V
nC
VDD=480V,ID=4.86525A,VGS=0to
10V
nC
VDD=480V,ID=4.86525A,VGS=0to
10V
V
VDD=480V,ID=4.86525A,VGS=0to
10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V
Final Data Sheet
5
Rev.2.0,2016-02-23
5 Page 
650VCoolMOSªCEPowerTransistor
IPD65R400CE,IPS65R400CE
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Diode recovery waveform
V,I
VDS( peak)
VDS
IF
dIF / dt
Irrm
VDS
trr
tF tS
IF t
QF QS
10 %Irrm
dIrr / dt Qtrrrr ==tFQ+F t+S QS
Table9Switchingtimes
Switching times test circuit for inductive load
VGS
VDS
VDS
VGS
Switching times waveform
90%
10%
td(on) tr
ton
td(off) tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
ID VDS
Unclamped inductive waveform
V(BR)DS
VDS
ID
VDS
Final Data Sheet
11 Rev.2.0,2016-02-23
11 Page | ||
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| PDF Descargar | [ Datasheet IPD65R400CE.PDF ] | |
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