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PDF LE25S20XA Data sheet ( Hoja de datos )

Número de pieza LE25S20XA
Descripción 2 Mb (256K x 8) Serial Flash Memory
Fabricantes ON Semiconductor 
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LE25S20XA
Serial Flash Memory
2 Mb (256K x 8)
Overview
The LE25S20XA is a SPI bus flash memory device with a 2M bit (256K
8-bit) configuration. It uses a single 1.8V power supply. While making the
most of the features inherent to a serial flash memory device, the
LE25S20XA is housed in an 8-pin ultra-miniature package. All these
features make this device ideally suited to storing program in applications
more compact dimensions. The LE25S20XA also has a small sector erase
capability which makes the device ideal for storing parameters or data that
have fewer rewrite cycles and conventional EEPROMs cannot handle due
to insufficient capacity.
www.onsemi.com
Features
1.
Operations power supply
Operating frequency
Temperature range
Serial interface
Electronic Identification
Sector size
Erase functions
Page program function
Status functions
Low operation current
Erase time
Page program time (tPP)
High reliability
Package
WLCSP8, 1.55x1.53
: 1.65 to 1.95V supply voltage range
: 40MHz (max)
: –40 to +85C
: SPI mode 0, mode 3 supported
: JDEC ID, Device ID
: 4K bytes/small sector, 64K bytes/sector
: Small Sector Erase (SSE), Sector Erase (SE), Chip Erase (CHE)
: 256 bytes/page
: Ready/Busy information, protect information
: 6.0mA (Read mode operation current ,40MHz)
:15mA (Erase or Program mode operating current)
:10uA (CMOS standby current)
: 40ms (SSE, typ), 80ms (SE, typ), 300ms (CHE, typ)
: 3.0ms/256 bytes (typ.), 3.5ms/256 bytes (max.)
: 100,000 erase/program cycles
: 20 years data retention period
: WLCSP8
* This product is licensed from Silicon Storage Technology, Inc. (USA).
ORDERING INFORMATION
See detailed ordering and shipping information on page 24 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
June 2016 - Rev. 0
1
Publication Order Number :
LE25S20XA/D

1 page




LE25S20XA pdf
Table 3 Command Settings
2M Bit
sector(64KB)
3
2
1
0
LE25S20XA
small sector
63
to
48
47
to
32
31
to
16
15
to
2
1
0
address space(A23 to A0)
03F000h
03FFFFh
030000h
02F000h
030FFFh
02FFFFh
020000h
01F000h
020FFFh
01FFFFh
010000h
00F000h
010FFFh
00FFFFh
002000h
001000h
000000h
002FFFh
001FFFh
000FFFh
www.onsemi.com
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LE25S20XA arduino
LE25S20XA
6. Small Sector Erase
Small sector erase is an operation that sets the memory cell data in any small sector to "1". A small sector consists
of
4Kbytes. "Figure 11 Small Sector Erase" shows the timing waveforms, and Figure 20 shows a small sector erase
flowchart. The small sector erase command consists of the first through fourth bus cycles, and it is initiated by
inputting the 24-bit addresses following (20h) or (D7h). Addresses A17 to A12 are valid, and Addresses A23 to
A18 are "don't care". After the command has been input, the internal erase operation starts from the rising CS edge,
and it ends automatically by the control exercised by the internal timer. Erase end can also be detected using status
register RDY.
Figure 11 Small Sector Erase
CS
Self-timed
Erase Cycle
tSSE
SCK
SI
SO
Mode3 0 1 2 3 4 5 6 7 8
Mode0
15 16 23 24 31
8CLK
20h / D7h
MSB
Add. Add. Add.
High Impedance
7. Sector Erase
Sector erase is an operation that sets the memory cell data in any sector to "1". A sector consists of 64Kbytes.
"Figure 12 Sector Erase" shows the timing waveforms, and Figure 20 shows a sector erase flowchart. The sector
erase command consists of the first through fourth bus cycles, and it is initiated by inputting the 24-bit addresses
following (D8h). Addresses A17 to A16 are valid, and Addresses A23 to A18 are "don't care". After the command
has been input, the internal erase operation starts from the rising CS edge, and it ends automatically by the control
exercised by the internal timer. Erase end can also be detected using status register RDY.
Figure 12 Sector Erase
CS
Self-timed
Erase Cycle
tSE
SCK
SI
SO
Mode3
Mode0
012345678
15 16 23 24 31
8CLK
MSB
D8h
Add. Add. Add.
High Impedance
www.onsemi.com
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