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PDF IHW20N135R3 Data sheet ( Hoja de datos )

Número de pieza IHW20N135R3
Descripción IGBT
Fabricantes Infineon 
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No Preview Available ! IHW20N135R3 Hoja de datos, Descripción, Manual

ResonantSwitchingSeries
ReverseconductingIGBTwithmonolithicbodydiode
IHW20N135R3
Datasheet
IndustrialPowerControl

1 page




IHW20N135R3 pdf
ResonantSwitchingSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
Integrated gate resistor
IGES
gfs
rG
VGE=0V,IC=0.50mA
VGE=15.0V,IC=20.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
VGE=0V,IF=20.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
IC=0.50mA,VCE=VGE
VCE=1350V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=20.0A
IHW20N135R3
min.
Value
typ.
max. Unit
1350 -
-V
-
-
1.60 1.80
1.80 -
V
- 1.90 -
-
-
1.60 1.80
1.73 -
V
- 1.80 -
5.1 5.8 6.4 V
- - 100.0 µA
- - 2500.0
- - 100 nA
- 14.8 - S
none
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=1080V,IC=20.0A,
VGE=15V
min.
Value
typ.
max. Unit
- 1500 -
- 55 - pF
- 45 -
- 195.0 - nC
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-off delay time
Fall time
Turn-off energy
td(off)
tf
Eoff
Tvj=25°C,
VCC=600V,IC=20.0A,
VGE=0.0/15.0V,
RG(on)=15.0,RG(off)=15.0,
Lσ=175nH,Cσ=40pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
min.
Value
typ.
max. Unit
- 335 - ns
- 50 - ns
- 1.30 - mJ
5 Rev.2.2,2015-01-26

5 Page





IHW20N135R3 arduino
ResonantSwitchingSeries
IHW20N135R3
2.5
IC=40A, Tj=25°C
IC=40A, Tj=175°C
2.0
16
270V
1080V
14
12
1.5 10
8
1.0 6
4
0.5
2
0.0
100
1000
dv/dt,VOLTAGESLOPE[V/µs]
Figure 17. Typicalturnoffswitchingenergylossfor
softswitching
(inductiveload,Tvj=175°C,VGE=0/15V,
IC=20A,RG=15,dynamictestcircuitin
Figure E)
1000
Ciss
Coss
Crss
100
0
0 50 100 150
QGE,GATECHARGE[nC]
Figure 18. Typicalgatecharge
(IC=20A)
200
1
D=0.5
0.2
0.1 0.1
0.05
0.02
0.01
single pulse
0.01
10
0 10 20 30 40 50 60 70 80 90 100
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 19. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
0.001
1E-6
i: 1 2
3456
ri[K/W]: 9.8E-3 0.01407993 0.0698 0.1158 0.1569 0.1137
τi[s]: 2.8E-5 4.7E-5
2.0E-4 1.2E-3 9.9E-3 0.08835259
1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 20. IGBTtransientthermalresistance
(D=tp/T)
11 Rev.2.2,2015-01-26

11 Page







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