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Número de pieza | BUZ31H | |
Descripción | Power-Transistor | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BUZ31H (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! SIPMOS ® Power Transistor
BUZ 31 H
• N channel
• Enhancement mode
• Avalanche-rated
• Normal Level
. Pb-free lead plating; RoHs compliant
. Halogen-free according to IEC61249-2-21
Type
BUZ 31 H
VDS
200 V
ID
14.5 A
RDS(on)
0.2 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 30 ˚C
Pulsed drain current
TC = 25 ˚C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 14.5 A, VDD = 50 V, RGS = 25 Ω
L = 1.42 mH, Tj = 25 ˚C
Gate source voltage
ESD-Sensitivity HBM as per MIL-STD 883
Power dissipation
TC = 25 ˚C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Pin 1
G
Pin 2
D
Package
PG-TO-220-3
Pb-free
Yes
Pin 3
S
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Values
14.5
58
13.5
9
Unit
A
mJ
200
± 20
Class 1
95
-55 ... + 150
-55 ... + 150
≤ 1.32
75
E
55 / 150 / 56
V
W
˚C
K/W
Rev. 2.5
Page 1
2009-11-09
1 page BUZ 31 H
Power dissipation
Ptot = ƒ(TC)
100
W
Ptot 80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 ˚C 160
TC
Drain current
ID = ƒ(TC)
parameter: VGS ≥ 10 V
14
A
12
ID 11
10
9
8
7
6
5
4
3
2
1
0
0 20 40 60 80 100 120 ˚C 160
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0.01, TC = 25˚C
10 2
A
ID
10 1
tp = 15.0µs
100 µs
1 ms
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 1
K/W
ZthJC 10 0
10 0
10 -1
10 0
10 1
10 ms
DC
10 2 V
VDS
10 -1
10 -2
D = 0.50
0.20
0.10
0.05
0.02
0.01
single pulse
10 -3
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Rev. 2.5
Page 5
2009-11-09
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet BUZ31H.PDF ] |
Número de pieza | Descripción | Fabricantes |
BUZ31 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | Siemens Semiconductor Group |
BUZ31 | SIPMOS Power Transistor | Infineon Technologies AG |
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BUZ31 | Trans MOSFET N-CH 200V 14.5A 3-Pin(3+Tab) TO-220 | New Jersey Semiconductor |
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