|
|
PDF WCR470N60T Data sheet ( Hoja de datos )
| Número de pieza | WCR470N60T | |
| Descripción | 600V N-Channel Super Junction MOSFET | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de WCR470N60T (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
WCR470N60T/WCR470N60TF
WCR470N60T/WCR470N60TF
600V N-Channel Super Junction MOSFET
Description
The WCR470N60T/WCR470N60TF series is new
generation of high voltage MOSFET family that is utilizing
an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance,
and withstand extreme dv/dt rate and higher avalanche
energy. This device is suitable for various AC/DC power
conversion in switching mode operation for higher
efficiency.
Features
650V@TJ=150°C
Typ.RDS(on)=0.42Ω
Low gate charge(typ. Qg= 12.6nC)
100% avalanche tested
100% Rg tested
Order Information
Device
Package
Marking
Units/Tube
WCR470N60T-3/T
TO-220
WCR470N60TYYWW
50
WCR470N60TF-3/T TO-220F WCR470N60TFYYWW
50
WCR
470N60
TFYYWW
WCR
470N60
TYYWW
Note 1: WCR470N60T=Device code ; YY=Year ;WW=Week (A~z);
Note 2: WCR470N60TF=Device code ; YY=Year ;WW=Week (A~z);
TO-220F
TO-220
Absolution Maximum Ratings TA=250C unless otherwise noted
Parameter
Symbol
WCR470N60T
WCR470N60TF
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
600
±30
Continuous Drain Current A TC=25°C
TC=100°C
Pulsed Drain Current B
Single Pulsed Avalanche Energy C
Avalanche Current B
Repetitive Avalanche Energy B
ID
IDM
EAS
IAR
EAR
9.4
5.9
25
120
2
0.28
Power Dissipation
TC=25°C
Derate above 25°C
PD
73.5
0.58
29.8
0.24
Operating and Storage Temperature Range TJ,TSTG
-55~150
Lead Temperature
Thermal Resistance Ratings
TL
260
Maximum Junction-to-Ambient
RθJA
60
80
Maximum Junction-to-Case
RθJC
1.7
4.2
Unit
V
A
A
mJ
A
mJ
W
W/°C
°C
°C
°C/W
Will Semiconductor Ltd. 1 Jan, 2016 - Rev.0.9
1 page  
WCR470N60T/WCR470N60TF
100 100
10
10ms
1
DC
limited by on-state resistance
0.1
100us 10us
1ms
10
100us 10us
10ms
1 1ms
DC
limited by on-state resistance
0.1
0.01
1
101
10 100
VDS(V)
TO-220
Safe Operating Area(Note F )
1000
0.01
1
101
10 100
V (V)
DS
TO-220F
Safe Operating Area(Note F )
1000
100 0.5
0.2
0.1
0.05
10-1 0.02
0.01
single pulse
10-2
10-5
10-4
0.5
100 0.2
0.1
0.05
0.02
10-1
0.01
single pulse
10-3
tp[s]
10-2
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp[s]
TO-220
TO-220F
Transient thermal response (Junction-to-Case)(Note F)
Will Semiconductor Ltd. 5 Jan, 2016 - Rev.1.0
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WCR470N60T.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| WCR470N60T | 600V N-Channel Super Junction MOSFET | Will Semiconductor |
| WCR470N60TF | 600V N-Channel Super Junction MOSFET | Will Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |