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PDF IPU60R3K4CE Data sheet ( Hoja de datos )
| Número de pieza | IPU60R3K4CE | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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IPD60R3K4CE,IPU60R3K4CE,IPS60R3K4CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorLighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
DPAK
tab
2
1
3
IPAK
tab
12 3
IPAKSL
tab
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
3400
mΩ
Id. 2.6 A
Qg.typ
4.6
nC
ID,pulse
3.9
A
Eoss@400V
0.57
µJ
Type/OrderingCode
IPD60R3K4CE
IPU60R3K4CE
IPS60R3K4CE
Package
PG-TO 252
PG-TO 251
PG-TO 251
Marking
60S3K4CE
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-02-26
1 page  
600VCoolMOSªCEPowerTransistor
IPD60R3K4CE,IPU60R3K4CE,IPS60R3K4CE
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Reverse recovery time
VSD
trr
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Min.
-
-
-
-
Values
Typ. Max.
0.9 -
160 -
0.42 -
5.1 -
Unit Note/TestCondition
V VGS=0V,IF=0.6A,Tj=25°C
ns
VR=400V,IF=0.6A,diF/dt=100A/µs;
see table 9
µC
VR=400V,IF=0.6A,diF/dt=100A/µs;
see table 9
A
VR=400V,IF=0.6A,diF/dt=100A/µs;
see table 9
Final Data Sheet
5 Rev.2.0,2016-02-26
5 Page 
600VCoolMOSªCEPowerTransistor
IPD60R3K4CE,IPU60R3K4CE,IPS60R3K4CE
6PackageOutlines
*) mold flash not included
MILLIMETERS
INCHES
DIM
MIN MAX MIN MAX
A
2.16
2.41
0.085
0.095
A1
0.00
0.15
0.000
0.006
b
0.64
0.89
0.025
0.035
b2
0.65
1.15
0.026
0.045
b3
5.00
5.50
0.197
0.217
c
0.46
0.60
0.018
0.024
c2
0.46
0.98
0.018
0.039
D
5.97
6.22
0.235
0.245
D1
5.02
5.84
0.198
0.230
E
6.40
6.73
0.252
0.265
E1
4.70
5.60
0.185
0.220
e 2.29 (BSC)
0.090 (BSC)
e1 4.57 (BSC)
0.180 (BSC)
N3
3
H
9.40
10.48
0.370
0.413
L
1.18
1.70
0.046
0.067
L3
0.90
1.25
0.035
0.049
L4
0.51
1.00
0.020
0.039
F1 10.60
0.417
F2 6.40
0.252
F3 2.20
0.087
F4 5.80
0.228
F5 5.76
0.227
F6 1.20
0.047
Figure1OutlinePG-TO252,dimensionsinmm/inches
DOCUMENT NO.
Z8B00003328
SCALE
0
2.0
0 2.0
4mm
EUROPEAN PROJECTION
ISSUE DATE
01-09-2015
REVISION
05
Final Data Sheet
11 Rev.2.0,2016-02-26
11 Page | ||
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