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Número de pieza | IPA032N06N3G | |
Descripción | Power-Transistor | |
Fabricantes | Infineon | |
Logotipo | ||
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OptiMOSTM3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance RDS(on)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
IPA032N06N3 G
IPA032N06N3 G
Product Summary
VDS
RDS(on),max
ID
60 V
3.2 mW
84 A
Package
Marking
PG-TO220-3-31
032N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse3) E AS I D=100 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
Rev. 2.0
page 1
Value
84
60
336
235
±20
41
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
2013-08-27
1 page IPA032N06N3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
300
10 V 7 V
6V
200
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
8
5 V 5.5 V
6V
6
100
5.5 V
5V
4
2
7V
10 V
4.5 V
0
012345
VDS [V]
0
0 50 100 150 200 250 300
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
300
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
200
250
200
150
100
50
0
0
Rev. 2.0
160
120
80
175 °C
25 °C
40
24
VGS [V]
0
60
page 5
50 100
ID [A]
150
2013-08-27
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IPA032N06N3G.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPA032N06N3G | Power-Transistor | Infineon |
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