(PDF) CE3512K2 Datasheet - 12 GHz Super Low Noise FET

Número de pieza	CE3512K2
Descripción	12 GHz Super Low Noise FET
Fabricantes	CEL
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No Preview Available ! RF Low Noise FET CE3512K2 12 GHz SupEenrteLroawShNorot iDsoecuFmEeTnti/nTitHleoNllaomwe HPelarestic PKG DESCRIPTION  Super Low Noise and High Gain  Hollow (Air Cavity) Plastic package FEATURES  Super Low noise figure and high associated gain: NF = 0.30 dB TYP., Ga = 13.7 dB TYP. @VDS = 2 V, ID = 10 mA, f = 12 GHz PACKAGE  Micro-X plastic package APPLICATIONS  DBS LNB gain-stage, Mix-stage  Low noise amplifier for microwave communication systems ORDERING INFORMATION Part Number Order Number CE3512K2 CE3512K2-C1 Package Micro-X plastic package Marking C5 Description • Embossed tape 8 mm wide • Pin 4 (Gate) faces the perforation side of the tape • MOQ 10 kpcs/reel This document is subject to change without notice. Date Published: July 2016 CDS-0018-05 (Issue A) 1 1 page CE3512K2 S-PARAMETERS S-Parameters are available on CEL’s Part Summary page under S-parameters RECOMMENDED SOLDERING CONDITIONS Recommended Soldering Conditions are available on CEL’s Part Summary page under Associated Documents PACKAGE DIMENSIONS Micro-X plastic package This document is subject to change without notice. 5 5 Page

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PDF CE3512K2 Data sheet ( Hoja de datos )