|
|
PDF D20N06E Data sheet ( Hoja de datos )
| Número de pieza | D20N06E | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | CHONGQING PINGYANG ELECTRONICS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de D20N06E (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
D20N06E
FEATURE
20 Amps,55 Volts N-CHANNEL Power MOSFET
DFN5*6
20A,55V,RDS(ON)MAX=15mΩVGS=10V/5A
Low gate charge
Low Ciss
Fast switching
100% avalanche tested
Improved dv/dt capability
APPLICATION
High Frequency Piont-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
LCD/LED back light
GENERAL DESCRIPTION
The D20N06E is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and
gate charge for most of the synchronous buck converter applications.
The D20N06E meet the RoHS and Green product requirement,100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Channel Temperature
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
VDSS
VGSS
ID
IDM
EAS
IAS
dv/dt
TJ,TSTG
TCH
TL
D20N06E
55
±20
20
80
20
20
5.5
-55 to +150
150
260
UNIT
V
A
mJ
A
V/ns
℃
℃
℃
Thermal Characteristics
Parameter
Thermal resistance , Channel to Case
Thermal resistance , Channel to Ambient
Maximum Power Dissipation
TC=25℃
Symbol
Rth(ch-c)
Rth(ch-a)
PD
MAX
2.7
55
38
Units
℃/W
℃/W
W
1 page  
RATINGAND CHARACTERISTIC CURVES
80
10V
60
6V 4.5V
40
3.5V
20
VGS=3V
0
01 234
VDS,Drain-to-Source Voltage(V)
100
5
TJ =150℃
10
TJ =25℃
1
VGS =0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2
VDS,Source-Drain Voltage(V)
100
1.4
90
80
70
60
50
40
-60 -40 -20 0 25 50 75 100 125 150 175
TJ , Junction Temperature(℃)
12
VDS=30V
10 ID =20A
8
6
4
2
0
0
10000
5 10 15 20 25
Qg ,Total Gate Charge(nC)
30
1000
C iss
100
10
C oss
C rss
0
0
F= 1MHz
10 20 30 40 50 60
VDS,Drain-to-Source Voltage(V)
3
2.5
2
1.5
1 VGS=10V
0.5
0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature(℃)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet D20N06E.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| D20N06E | N-CHANNEL Power MOSFET | CHONGQING PINGYANG ELECTRONICS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |