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PDF BCX38B Data sheet ( Hoja de datos )
| Número de pieza | BCX38B | |
| Descripción | Si-Epitaxial Planar Darlington-Transistors | |
| Fabricantes | Diotec Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BCX38B (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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BCX38B
BCX38B
NPN
Si-Epitaxial Planar Darlington-Transistors
Si-Epitaxial Planar Darlington-Transistoren
Version 2006-07-24
Power dissipation
Verlustleistung
Plastic case
E B C Kunststoffgehäuse
Weight approx. – Gewicht ca.
2 x 2.54
Dimensions - Maße [mm]
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
NPN
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
VCEO
VCBO
VEBO
Ptot
IC
ICM
Tj
TS
Grenzwerte (TA = 25°C)
BCX38B
60 V
80 V
10 V
625 mW 1)
800 mA
2A
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis 2)
IC = 100 mA, VCE = 5 V
IC = 500 mA, VCE = 5 V
hFE
hFE
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
IC = 800 mA, IB = 8 mA
VCEsat
Base-Emitter voltage – Basis-Emitter-Spannung 2)
IC = 800 mA, VCE = 5 V
VBE
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 60 V, (E open)
ICBO
Emitter-Base cutoff current – Emitter-Basis-Reststrom
VEB = 8 V, (C open)
IEB0
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
2000
4000
–
–
–
–
– – 1.25 V
– – 1.8 V
– – 100 nA
– – 100 nA
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BCX38B.PDF ] | |
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