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PDF BT15T120ANF Data sheet ( Hoja de datos )
| Número de pieza | BT15T120ANF | |
| Descripción | Silicon FS Planar IGBT | |
| Fabricantes | Huajing Microelectronics | |
| Logotipo |  |
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Silicon FS Planar IGBT
BT15T120ANF
○R
General Description：
Using HUAJING's proprietary trench design and advanced FS(field
stop) technology, the 1200V Trench FS-IGBT offers superior conduction
and switching performances, high avalanche ruggedness.
VCES
IC
Ptot （TC=25℃）
VCE(SAT)
1200
15
186
1.95
V
A
W
V
Features：
l Trench FS Technology, Positive temperature coefficient
l Low saturation voltage: VCE(sat), typ = 1.95V
@ IC = 15A and TC = 25°C
l Extremely enhanced avalanche capability
Applications：
Power switch circuit of induction cooker(IH).
Absolute Maximum Ratings
（Tc= 25℃ unless otherwise specified）：
Symbol
Parameter
VCES
Collector-Emitter Voltage
VGES
Gate- Emitter Voltage
IC
ICMa1
IF
Collector Current
Collector Current @TC = 100 °C
Pulsed Collector Current
Diode Continuous Forward Current @TC = 100 °C
IFM Diode Maximum Forward Current
Power Dissipation @ TC = 25°C
PD Power Dissipation @TC = 100 °C
TJ，Tstg Operating Junction and Storage Temperature Range
TL Maximum Temperature for Soldering
Rating
1200
±20
30
15
45
15
45
186
74
-55 to +150
300
Units
V
V
A
A
A
A
A
W
W
℃
℃
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction to case for IGBT
RθJC Thermal Resistance, Junction to case for Diode
Typ.
Max.
Units
0.55 0.8 ℃/W
1.0 2 ℃/W
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 8 201 5 V01
1 page  
BT15T120ANF
○R
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 8 201 5 V01
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BT15T120ANF.PDF ] | |
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