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PDF CS640A8H Data sheet ( Hoja de datos )

Número de pieza CS640A8H
Descripción Silicon N-Channel Power MOSFET
Fabricantes Huajing Microelectronics 
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No Preview Available ! CS640A8H Hoja de datos, Descripción, Manual

Silicon N-Channel Power MOSFET
CS640 A8H
R
General Description
CS640 A8H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features
l Fast Switching
l Low ON Resistance(Rdson0.18)
l Low Gate Charge (Typical Data:24nC)
l Low Reverse transfer capacitances(Typical:25pF)
l 100% Single Pulse avalanche energy Test
Applications
CRTTV/Monitor and Lighting.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD(TC=25)
RDS(ON)Typ
200
18
156
0.12
Rating
200
18
11.2
72
±30
950
90
4.2
5.0
156
1.25
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pa g e 1 of 10 201 5V01

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CS640A8H pdf
CS640 A8H
R
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