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PDF CS730A8RD Data sheet ( Hoja de datos )

Número de pieza CS730A8RD
Descripción Silicon N-Channel Power MOSFET
Fabricantes Huajing Microelectronics 
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No Preview Available ! CS730A8RD Hoja de datos, Descripción, Manual

Silicon N-Channel Power MOSFET
CS730 A8RD
R
General Description
CS730 A8RD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
VDSS
ID
PD(TC=25)
RDS(ON)Typ
400
6
75
0.75
switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for
system miniaturization and higher efficiency. The package form
is TO-220AB, which accords with the RoHS standard.
Features
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data:14.5nC)
l Low Reverse transfer capacitances(Typical:7.5pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of electron ballast and adaptor.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
VESD(G-S)
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
400
6
4.2
24
±30
200
26
2.3
5.0
75
0.60
3000
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
V
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pa g e 1 of 10 201 5V01

1 page




CS730A8RD pdf
CS730 A8RD
R
100
10
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 TC
125
VGS=10V
1
1.00E-05
1.00E-04
100
PULSED TEST
VDS=10V
10
1.00E-03
1.00E-02
1.00E-01
t Pulse Width , Seconds
Figure 6 Maximun Peak Current Capability
4
3
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
ID=6A
1 +150
+25
2 ID=3A
ID=1.5A
1
-55
0.1
2
2.5
2
468
Vgs , Gate to Source Voltagevolts
Figure 7 TyfpiicgaluTrreans9fer Characteristics
PULSED TEST
Tc =25
0
10 4 6 8 10 12 14
Vgs , Gate to Source VoltageVolts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
2.5
VGS=10V
2 ID=3.0A
VGS=10V
1.5 1.5
VGS=20V
11
0.5 0.5
0
0 5 10 15 20 25
Id , Drain Current,Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
0
-100 -50 0 50 100 150 200
Tj, Junction temperatureC
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 10 201 5V01

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