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PDF CS1N50A1 Data sheet ( Hoja de datos )
| Número de pieza | CS1N50A1 | |
| Descripción | Silicon N-Channel Power MOSFET | |
| Fabricantes | Huajing Microelectronics | |
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Silicon N-Channel Power MOSFET
CS1N50 A1
○R
General Description：
VDSS
500 V
CS1N50 A1, the silicon N-channel Enhanced ID
1.0 A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
9.5 Ω
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-92,
which accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤11Ω)
l Low Gate Charge (Typical Data:4nC)
l Low Reverse transfer capacitances(Typical:2.2pF)
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
500
1.0
0.7
4.0
±30
20
3
0.8
5.0
3
0.024
150，–55 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pa g e 1 of 11 20 15V0 1
1 page  
CS1N50 A1
○R
10
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 − TC
125
1
VGS=10V
0.1
1.00E-05
1.00E-04
1.5
1.2
VDS=25V
0.9
0.6
0.3
1.00E-03
1.00E-02
1.00E-01
t Pulse W idth , Seconds
Figure 6 Maximun Peak Current Capability
14
13
12
11
10
9
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
ID= 1.0A
ID= 0.5A
ID= 0.25A
0
02468
Vgs,Gate to Source Voltage,Volts
Figure 7 Typical Transfer Characteristics
12
8
10 4 6 8 10 12 14
Vgs , Gate to Source Voltage，Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
2.5
11
VGS=10V
10
2
VGS=10V
ID=250μA
1.5
91
8 0.5
7
0
Figure
0.3 0.6 0.9 1.2
Id,Drain Current,Amps
9 Typical Drain to Source ON Resistance
vs Drain Current
1.5
0
-100 -50 0 50 100 150 200
Tj,Junction Temperature,C
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 11 20 15V0 1
5 Page 
CS1N50 A1
○R
The name and content of poisonous and harmful material in products
Part’s Name
Hazardous Substance
Pb Hg Cd Cr(VI) PBB PBDE
Limit
≤0.1%
≤0.1%
≤0.01%
≤0.1%
≤0.1%
≤0.1%
Lead Frame
○ ○○ ○○○
Molding Compound
○
○
○
○
○
○
Chip ○ ○ ○ ○ ○ ○
Wire Bonding
○ ○○ ○○○
Solder
× ○○ ○○○
○：means the hazardous material is under the criterion of SJ/T11363-2006.
×：means the hazardous material exceeds the criterion of SJ/T11363-2006.
Note
The plumbum element of solder exist in products presently, but within the allowed
range of Eurogroup’s RoHS.
Warnings
1. Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
2. When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
4. This publication is made by Huajing Microelectronics and subject to regular change without
notice.
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061
http://www. crhj.com.cn
HTU UTH
Tel: +86 0510-85807228 Fax: +86- 0510-85800864
Marketing Part：
Post：214061
Tel： +86 0510-81805277/81805336
Fax: +86 0510-85800360/85803016
Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 11 of 11 201 5V01
11 Page | ||
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| PDF Descargar | [ Datasheet CS1N50A1.PDF ] | |
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