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PDF CS1N60A1H Data sheet ( Hoja de datos )

Número de pieza CS1N60A1H
Descripción Silicon N-Channel Power MOSFET
Fabricantes Huajing Microelectronics 
Logotipo Huajing Microelectronics Logotipo



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Silicon N-Channel Power MOSFET
CS1N60 A1H
R
General Description
CS1N60 A1H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
VDSS
ID
PD (TC=25)
RDS(ON)Typ
600
0.8
3
11
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-92,
which accords with the RoHS standard.
Features
l Fast Switching
l Low ON Resistance(Rdson15)
l Low Gate Charge (Typical Data:4nC)
l Low Reverse transfer capacitances(Typical:2.6pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
600
0.8
0.6
3.2
±30
20
6
1.1
5
3
0.024
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
Electrical CharacteristicsTc= 25unless otherwise specified):
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pa g e 1 of 11 20 15V0 1

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CS1N60A1H pdf
CS1N60 A1H
R
10
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 TC
125
1
VGS=10V
0.1
1.00E-05
1.00E-04
1.5
1.00E-03
1.00E-02
1.00E-01
t Pulse Width , Seconds
Figure 6 Maximun Peak Current Capability
17
1.2
VDS=25V
0.9
0.6
0.3
16
15
14
13
12
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
ID= 0.8A
ID= 0.4A
ID= 0.2A
0
02468
Vgs,Gate to Source Voltage,Volts
Figure 7 Typical Transfer Characteristics
14
11
10 4 6 8 10 12 14
Vgs , Gate to Source VoltageVolts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
2.5
13
VGS=10V
12
2
VGS=10V
ID=250μA
1.5
11 1
10 0.5
9
0 0.3 0.6 0.9 1.2 1.5
Id,Drain Current,Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
0
-100 -50 0 50 100 150 200
Tj,Junction Temperature,C
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 11 20 15V0 1

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CS1N60A1H arduino
CS1N60 A1H
R
The name and content of poisonous and harmful material in products
Parts Name
Hazardous Substance
Pb Hg Cd Cr(VI) PBB PBDE
Limit
0.1%
0.1%
0.01%
0.1%
0.1%
0.1%
Lead Frame
○ ○○ ○○○
Molding Compound
Chip ○ ○ ○ ○ ○ ○
Wire Bonding
○ ○○ ○○○
Solder
× ○○ ○○○
○:means the hazardous material is under the criterion of SJ/T11363-2006.
×:means the hazardous material exceeds the criterion of SJ/T11363-2006.
Note
The plumbum element of solder exist in products presently, but within the allowed
range of Eurogroups RoHS.
Warnings
1. Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
2. When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
4. This publication is made by Huajing Microelectronics and subject to regular change without
notice.
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
AddNo.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061
http://www. crhj.com.cn
HTU UTH
Tel: +86 0510-85807228 Fax: +86- 0510-85800864
Marketing Part
Post214061
Tel+86 0510-81805277/81805336
Fax: +86 0510-85800360/85803016
Application and ServicePost214061 Tel / Fax+86- 0510-81805243/81805110
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