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Número de pieza | CS1N60B1R | |
Descripción | Silicon N-Channel Power MOSFET | |
Fabricantes | Huajing Microelectronics | |
Logotipo | ||
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No Preview Available ! Silicon N-Channel Power MOSFET
CS1N60 B1R
○R
General Description:
CS1N60 B1R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
VDSS
ID
PD (TC=25℃)
RDS(ON)Typ
600
1.5
3
7
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-92,
which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤8Ω)
l Low Gate Charge (Typical Data:5.2nC)
l Low Reverse transfer capacitances(Typical:2pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
600
1.5
0.9
6
±30
25
6
1.1
5
3
0.024
150,–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pa g e 1 of 11 20 15V0 1
1 page CS1N60 B1R
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WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 11 20 15V0 1
5 Page CS1N60 B1R
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The name and content of poisonous and harmful material in products
Part’s Name
Hazardous Substance
Pb Hg Cd Cr(VI) PBB PBDE
Limit
≤0.1%
≤0.1%
≤0.01%
≤0.1%
≤0.1%
≤0.1%
Lead Frame
○ ○○ ○○○
Molding Compound
○
○
○
○
○
○
Chip ○ ○ ○ ○ ○ ○
Wire Bonding
○ ○○ ○○○
Solder
× ○○ ○○○
○:means the hazardous material is under the criterion of SJ/T11363-2006.
×:means the hazardous material exceeds the criterion of SJ/T11363-2006.
Note
The plumbum element of solder exist in products presently, but within the allowed
range of Eurogroup’s RoHS.
Warnings
1. Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
2. When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
4. This publication is made by Huajing Microelectronics and subject to regular change without
notice.
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Add: No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061
http://www. crhj.com.cn
HTU UTH
Tel: +86 0510-85807228 Fax: +86- 0510-85800864
Marketing Part:
Post:214061
Tel: +86 0510-81805277/81805336
Fax: +86 0510-85800360/85803016
Application and Service:Post:214061 Tel / Fax:+86- 0510-81805243/81805110
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 11 of 11 201 5V01
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet CS1N60B1R.PDF ] |
Número de pieza | Descripción | Fabricantes |
CS1N60B1R | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
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