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PDF CS6N60A4TY Data sheet ( Hoja de datos )

Número de pieza CS6N60A4TY
Descripción Silicon N-Channel Power MOSFET
Fabricantes Huajing Microelectronics 
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Silicon N-Channel Power MOSFET
CS6N60 A4TY
R
General Description
CS6N60 A4TY, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-252,
which accords with the RoHS standard.
Features
l Fast Switching
l Low ON Resistance(Rdson1.7)
l Low Gate Charge (Typical Data: 17nC)
l Low Reverse transfer capacitances(Typical: 2.7pF)
l 100% Single Pulse avalanche energy Test
VDSS
ID
PD(TC=25)
RDS(ON)Typ
600 V
6A
85 W
1.4
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
600
6
3.6
24
±30
270
31
2.5
5.0
85
0.68
15055 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1

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CS6N60A4TY pdf
CS6N60 A4TY
R
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 TC
125
10
1
1.00E-05
1.00E-04
9
PULSE DURATION = 10μs
7.5 DUTY CYCLE = 0.5%MAX
VDS=30V
1.00E-03
1.00E-02
1.00E-01
t Pulse Width , Seconds
Figure 6 Maximun Peak Current Capability
6
5
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
6
4.5
3 -55
+25
1.5
+150
4
ID= 6A
3 ID=3A
ID= 1.5A
2
1
0
2345
Vgs , Gate to Source Voltage , Volts
Figure 7 Typical Transfer Characteristics
3
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25
2.5
0
6 4 6 8 10 12 14
Vgs , Gate to Source VoltageVolts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
2.5
2.25
2
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=.2.5A
1.75
2
VGS=10V
1.5
1.25
1.5 1
0.75
1
0 5 10 15
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
20
0.5
-50
Figure
0 50 100 150
Tj, Junction temperature , C
10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 1 0 20 15V0 1

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