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PDF CS7N60A7HD Data sheet ( Hoja de datos )
| Número de pieza | CS7N60A7HD | |
| Descripción | Silicon N-Channel Power MOSFET | |
| Fabricantes | Huajing Microelectronics | |
| Logotipo |  |
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Silicon N-Channel Power MOSFET
CS7N60 A7HD
○R
General Description：
CS7N60 A7HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-126F,
which accords with the RoHS standard.
Features：
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data:28nC)
l Low Reverse transfer capacitances(Typical:12pF)
l 100% Single Pulse avalanche energy Test
600 V
7A
40 W
0.88 Ω
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
VESD(G-S)
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
600
7
4.5
28
±30
550
54
3.3
5.0
40
0.32
3000
150，–55 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
V
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 2 015V01
1 page  
CS7N60 A7HD
○R
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 − TC
125
10
VGS=10V
1
1.00E-05
1.00E-04
14
12 PULSED TEST
VDS=30V
10
8
6
1.00E-03
1.00E-02
1.00E-01
t Pulse Width , Seconds
Figure 6 Maximun Peak Current Capability
4
3
2
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
ID= 7A
ID=3.5A
ID= 1.75A
41
2
0
0 2 4 6 8 10
Vgs , Gate to Source Voltage ， Volts
Figure 7 Typical Transfer Characteristics
1.2
PULSED TEST
Tc =25 ℃
1.1
12
0
4 6 8 10 12 14
Vgs , Gate to Source Voltage，Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
3
PULSED TEST
2.5 VGS=10V ID=3.5A
2
1 VGS=10V
1.5
0.9
1
0.8 0.5
0.7
0
12345
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
6
0
-100
-50
Figure
0 50 100 150
Tj, Junction temperature ,C
200
10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 1 0 2 015V01
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CS7N60A7HD.PDF ] | |
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