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PDF CS16N60A8H Data sheet ( Hoja de datos )

Número de pieza CS16N60A8H
Descripción Silicon N-Channel Power MOSFET
Fabricantes Huajing Microelectronics 
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Silicon N-Channel Power MOSFET
CS16N60 A8H
R
General Description
CS16N60 A8, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
VDSS
ID
PD(TC=25)
RDS(ON)Typ
600
16
180
0.41
performance and enhance the avalanche energy. The transistor can
be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard..
Features
l Fast Switching
l Low ON Resistance(Rdson0.5)
l Low Gate Charge (Typical Data:54nC)
l Low Reverse transfer capacitances(Typical: 18.5pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
600
16
11.5
64
±30
1000
100
4.5
5.0
180
1.44
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1

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CS16N60A8H pdf
1000
100
CS16N60 A8H
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
R
FOR TEMPERATURES
ABOVE 25DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 TC
125
VGS=10V
10
1.00E-05
1.00E-04
100
PULSED TEST
VDS=50V
1.00E-03
1.00E-02
1.00E-01
t Pulse Width , Seconds
Figure 6 Maximun Peak Current Capability
1.35
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
10
1 +150
+25
-55
0.1
2
468
Vgs , Gate to Source Voltage , Volts
Figure 7 Typical Transfer Characteristics
1.25
1.0
PULSED TEST
Tc =25
0.75
VGS=10V
VGS=20V
0.5
10
0.25
0.9
0.45
ID= 16A
ID= 8A
ID = 4A
0
4 6 8 10 12 14
Vgs , Gate to Source VoltageVolts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
3
VGS=10V
2.5 ID=8A
2
1.5
1
0.5
0
0 10
Figure 9
20 30 40 50 60
Id , Drain Current , Amps
Typical Drain to Source ON Resistance
vs Drain Current
70
0
-100
-50
Figure
0 50 100 150 200
Tj, Junction temperature , C
10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 1 0 20 15V0 1

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