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PDF CS1N65B3 Data sheet ( Hoja de datos )

Número de pieza CS1N65B3
Descripción Silicon N-Channel Power MOSFET
Fabricantes Huajing Microelectronics 
Logotipo Huajing Microelectronics Logotipo



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No Preview Available ! CS1N65B3 Hoja de datos, Descripción, Manual

Silicon N-Channel Power MOSFET
CS1N65 B3
R
General Description
CS1N65 B3, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
VDSS
ID
PD (TC=25)
RDS(ON)Typ
650
1.5
32
8.5
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard.
Features
l Fast Switching
l Low ON Resistance(Rdson9.5)
l Low Gate Charge (Typical Data:5.3nC)
l Low Reverse transfer capacitances(Typical:2pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
650
1.5
0.85
6.0
±30
25
5
1
5.0
32
0.256
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
Electrical CharacteristicsTc= 25unless otherwise specified):
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 10 20 15V0 1

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CS1N65B3 pdf
100
10
CS1N65 B3
R
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 TC
125
1
VGS=10V
0 .1
1 .0 0 E -0 5
1.5
1.2
0.9
0.6
0.3
1 .0 0 E -0 4
VDS=25V
1 .0 0 E -0 3
1 .0 0 E -0 2
1 .0 0 E -0 1
t , P u lse W id th , S ec o n d s
Figure 6 Maximun Peak Current Capability
12
11
10
9
8
7
1 .0 0 E + 0 0
1 .0 0 E + 0 1
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
ID=1.5A
ID0.75A
ID= 0.375A
0
02468
Vgs,Gate to Source Voltage,Volts
Figure 7 Typical Transfer Characteristics
14
6
10 4 6 8 10 12 14
Vgs , Gate to Source VoltageVolts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
2.5
13
VGS=10V
12
2
VGS=10V
ID=250μA
1.5
11 1
10 0.5
9
0 0.3 0.6 0.9 1.2 1.5
Id,Drain Current,Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
0
-100 -50 0 50 100 150 200
Tj,Junction Temperature,C
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHI NA RESO UR CES HUAJI NG M ICROELECTRONI CS C O., LTD. Pa g e 5 of 1 0 201 5V01

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