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PDF CS7N65A4TDY Data sheet ( Hoja de datos )

Número de pieza CS7N65A4TDY
Descripción Silicon N-Channel Power MOSFET
Fabricantes Huajing Microelectronics 
Logotipo Huajing Microelectronics Logotipo



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Silicon N-Channel Power MOSFET
CS7N65 A4TDY
R
General Description
CS7N65 A4TDY, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
VDSS
ID
PD(TC=25)
RDS(ON)Typ
650
7
95
1.1
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-252,
which accords with the RoHS standard.
Features
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data:24nC)
l Low Reverse transfer capacitances(Typical:4.5pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
VESD(G-S)
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
650
7
4.5
28
±30
450
54
3.3
5.0
95
0.76
3000
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
V
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R
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