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PDF CS10N65FA9HD Data sheet ( Hoja de datos )
| Número de pieza | CS10N65FA9HD | |
| Descripción | Silicon N-Channel Power MOSFET | |
| Fabricantes | Huajing Microelectronics | |
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Silicon N-Channel Power MOSFET
CS10N65F A9HD
○R
General Description：
CS10N65F A9HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
VDSS
ID
PD (TC=25℃)
RDS(ON)Typ
650
10
50
0.65
switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features：
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data:39nC)
l Low Reverse transfer capacitances(Typical:16pF)
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
VESD(G-S)
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
650
10
8.2
40
±30
700
70
3.7
5.0
50
0.4
4000
150，–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
V
℃
℃
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 1 of 10 2015V01
1 page  
CS10N65F A9HD
○R
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 − TC
125
10
VGS=10V
1
1.00E-05
1.00E-04
14
12 PULSED TEST
VDS=30V
10
8
6
4
2
1.00E-03
1.00E-02
1.00E-01
t Pulse Width , Seconds
Figure 6 Maximun Peak Current Capability
3
2.5
2
1.5
1
0.5
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
ID= 10A
ID= 5A
ID= 2.5A
0
0 2 4 6 8 10
Vgs , Gate to Source Voltage ， Volts
Figure 7 Typical Transfer Characteristics
1.1
PULSED TEST
Tc =25 ℃
1.0
12
0
4
Figure 8
3
6 8 10 12 14
Vgs , Gate to Source Voltage，Volts
Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
PULSED TEST
2.5 VGS=10V ID=5A
0.9 VGS=10V
0.8
0.7
2
1.5
1
0.5
0.6
0 2 4 6 8 10
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
12
0
-100
-50
Figure
0 50 100 150
Tj, Junction temperature ,C
200
10 Typical Drian to Source on Resistance
vs Junction Temperature
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 5 of 10 2015V01
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CS10N65FA9HD.PDF ] | |
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