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PDF CS2N70FA9 Data sheet ( Hoja de datos )

Número de pieza CS2N70FA9
Descripción Silicon N-Channel Power MOSFET
Fabricantes Huajing Microelectronics 
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No Preview Available ! CS2N70FA9 Hoja de datos, Descripción, Manual

Silicon N-Channel Power MOSFET
CS2N70F A9
R
General Description
VDSS
700 V
CS2N70F A9, the silicon N-channel Enhanced
ID
2A
VDMOSFETs, is obtained by the self-aligned planar Technology
PD (TC=25)
27
W
which reduce the conduction loss, improve switching
RDS(ON)Typ
4.7
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-220F,
which accords with the RoHS standard..
Features
l Fast Switching
l Low ON Resistance(Rdson6.5)
l Low Gate Charge (Typical Data:8.5nC)
l Low Reverse transfer capacitances(Typical:3.8pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
700
2.0
1.45
8.0
±30
80
6.4
1.1
5
27
0.216
15055 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 1 of 10 2015V01

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CS2N70FA9 pdf
CS2N70F A9
R
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 TC
125
10
1
1.00E-05
1.00E-04
6
PULSE DURATION = 10μs
5
DUTY CYCLE = 0.5%MAX
VDS=30V
4
1.00E-03
1.00E-02
t Pulse Width , Seconds
1.00E-01
Figure 6 Maximun Peak Current Capability
9
7
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
ID=2A
ID=1A
3
2 +150
ID=0.5A
ID=0.25A
5
+25
1
-55
0
2345
Vgs , Gate to Source Voltage , Volts
Figure 7 Typical Transfer Characteristics
3
6 4 6 8 10 12 14
Vgs , Gate to Source Voltage , Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
10.5
9
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25
2.5
2.25
2
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=1A
1.75
7.5 1.5
VGS=20V
1.25
61
0.75
4.5
0
Figure
123
Id , Drain Current , Amps
9 Typical Drain to Source ON Resistance
vs Drain Current
4
0.5
-50
Figure
0 50 100 150
Tj, Junction temperature , C
10 Typical Drian to Source on Resistance
vs Junction Temperature
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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