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Número de pieza | CS6N70FA9D | |
Descripción | Silicon N-Channel Power MOSFET | |
Fabricantes | Huajing Microelectronics | |
Logotipo | ||
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No Preview Available ! Huajing Discrete Devices
Silicon N-Channel Power MOSFET
○R
CS6N70F A9D
General Description:
CS6N70F A9D the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce
the conduction loss, improve switching performance and enhance
the avalanche energy. The transistor can be used in various power
switching circuit for systemminiaturization and higher efficiency.
The package form is TO-220F, which accords with the
RoHS standard.
Features:
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data:21nC)
l Low Reverse transfer capacitances(Typical:5pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
VESD(G-S)
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
700
6
35
1.5
Rating
700
6
3.6
24
±30
100
15
1.7
5.0
35
0.28
3000
150,–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
V
℃
℃
WUXI CHINA RE SOURCES HU AJING MICROELECTRONICS CO., LTD. Page 1 of 10 2012
1 page Huajing Discrete Devices
○R CS6N70F A9D
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 − TC
125
10
VGS=10V
1
1.00E-05
1.00E-04
14
12 PULSED TEST
VDS=30V
10
8
6
1.00E-03
1.00E-02
1.00E-01
t Pulse Width , Seconds
Figure 6 Maximun Peak Current Capability
4
3
2
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
ID= 6A
ID=3 A
ID= 1.75A
41
2
0
0 2 4 6 8 10
Vgs , Gate to Source Voltage , Volts
Figure 7 Typical Transfer Characteristics
1.6
PULSED TEST
Tc =25 ℃
1.5
12
1.4 VGS=10V
1.3
0
4 6 8 10 12 14
Vgs , Gate to Source Voltage,Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
3
PULSED TEST
2.5 VGS=10V ID=3.5A
2
1.5
1
1.2 0.5
1.0
0
1
Figure 9
2345
Id , Drain Current , Amps
Typical Drain to Source ON Resistance
vs Drain Current
6
0
-100
-50
Figure
0 50 100 150
Tj, Junction temperature ,C
200
10 Typical Drian to Source on Resistance
vs Junction Temperature
W U X I C H I N A R E SO U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pa g e 5 o f 1 0 2 0 1 2
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet CS6N70FA9D.PDF ] |
Número de pieza | Descripción | Fabricantes |
CS6N70FA9D | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
CS6N70FA9H | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
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