DataSheet.es    


PDF CS6N70FB9D Data sheet ( Hoja de datos )

Número de pieza CS6N70FB9D
Descripción Silicon N-Channel Power MOSFET
Fabricantes Huajing Microelectronics 
Logotipo Huajing Microelectronics Logotipo



Hay una vista previa y un enlace de descarga de CS6N70FB9D (archivo pdf) en la parte inferior de esta página.


Total 10 Páginas

No Preview Available ! CS6N70FB9D Hoja de datos, Descripción, Manual

Silicon N-Channel Power MOSFET
CS6N70F B9D
R
General Description
CS6N70F B9D, the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce
the conduction loss, improve switching performance and enhance
VDSS
ID
PD(TC=25)
RDS(ON)Typ
700
6
35
1.4
the avalanche energy. The transistor can be used in various power
switching circuit for system miniaturization and higher efficiency.
The package form is TO-220F, which accords with the RoHS
standard.
Features
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data:24nC)
l Low Reverse transfer capacitances(Typical:8.5pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
VESD(G-S)
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
700
6
3.6
24
±30
160
15
1.7
5.0
35
0.28
3000
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
V
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 1 of 10 2015V01

1 page




CS6N70FB9D pdf
CS6N70F B9D
R
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 TC
125
10
VGS=10V
1
1.00E-05
1.00E-04
14
12 PULSED TEST
VDS=30V
10
8
6
1.00E-03
1.00E-02
1.00E-01
t Pulse Width , Seconds
Figure 6 Maximun Peak Current Capability
6
4.5
3
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
ID= 6A
ID=3 A
ID= 1.75A
4
2
0
0 2 4 6 8 10
Vgs , Gate to Source Voltage Volts
Figure 7 Typical Transfer Characteristics
2.0
PULSED TEST
Tc =25
1.8
12
1.5
0
4 6 8 10 12 14
Vgs , Gate to Source VoltageVolts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
PULSED TEST
VGS=10V ID=3.5A
1.6 VGS=10V
1.4
1.2
1.0
0123456
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 5 of 10 2015V01

5 Page










PáginasTotal 10 Páginas
PDF Descargar[ Datasheet CS6N70FB9D.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
CS6N70FB9DSilicon N-Channel Power MOSFETHuajing Microelectronics
Huajing Microelectronics

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar