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PDF CS6N80FA9 Data sheet ( Hoja de datos )

Número de pieza CS6N80FA9
Descripción Silicon N-Channel Power MOSFET
Fabricantes Huajing Microelectronics 
Logotipo Huajing Microelectronics Logotipo



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No Preview Available ! CS6N80FA9 Hoja de datos, Descripción, Manual

Silicon N-Channel Power MOSFET
CS6N80F A9
R
General Description
CS6N80F A9, the silicon N-channel Enhanced VDMOSFETs, is
obtained by the self-aligned planar Technology which reduce the
conduction loss, improve switching performance and enhance
the avalanche energy. The transistor can be used in various
power switching circuit for system miniaturization and higher
efficiency. The package form is TO-220F, which accords with
the RoHS standard.
Features
l Fast Switching
l Low ON Resistance(Rdson2.2)
l Low Gate Charge (Typical Data:35nC)
l Low Reverse transfer capacitances(Typical:15pF)
l 100% Single Pulse avalanche energy Test
Applications
Atx PowerLED Power.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD(TC=25)
RDS(ON)Typ
800
6
45
1.8
Rating
800
6
3.8
24
±30
300
26
2.3
5.0
45
0.36
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS6N80FA9 pdf
CS6N80F A9
R
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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