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PDF CS10N80AND Data sheet ( Hoja de datos )

Número de pieza CS10N80AND
Descripción Silicon N-Channel Power MOSFET
Fabricantes Huajing Microelectronics 
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Silicon N-Channel Power MOSFET
CS10N80 AND
R
General Description
CS10N80 AND, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-3P(N), which accords with the RoHS standard.
Features
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data: 65nC)
l Low Reverse transfer capacitances(Typical: 25pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of PC POWER.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS
EAR a1
IAR a1
dv/dt a2
PD
VESD(G-S)
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD(TC=25)
RDS(ON)Typ
800
10
160
0.72
Rating
800
10
6.5
40
±30
440
40
2.8
5.0
160
1.28
6000
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
V
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