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PDF CS9N90FA9D Data sheet ( Hoja de datos )

Número de pieza CS9N90FA9D
Descripción Silicon N-Channel Power MOSFET
Fabricantes Huajing Microelectronics 
Logotipo Huajing Microelectronics Logotipo



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No Preview Available ! CS9N90FA9D Hoja de datos, Descripción, Manual

Silicon N-Channel Power MOSFET
CS9N90F A9D
R
General Description
CS9N90F A9HD the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
VDSS
ID
PD(TC=25)
RDS(ON)Typ
900
9
60
0.9
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-220F,
which accords with the RoHS standard.
Features
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data: 62nC)
l Low Reverse transfer capacitances(Typical: 18pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of PC POWER.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS
EAR a1
IAR a1
dv/dt a2
PD
VESD(G-S)
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
900
9
5.8
36
±30
350
30
2.5
5.0
60
0.48
6000
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
V
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS9N90FA9D pdf
CS9N90F A9D
R
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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