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PDF CS9N90ANHD Data sheet ( Hoja de datos )
| Número de pieza | CS9N90ANHD | |
| Descripción | Silicon N-Channel Power MOSFET | |
| Fabricantes | Huajing Microelectronics | |
| Logotipo |  |
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Silicon N-Channel Power MOSFET
CS9N90 ANHD
○R
General Description：
CS9N90 ANHD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
900
9
150
0.95
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-3P(N), which accords with the RoHS standard.
Features：
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data: 65nC)
l Low Reverse transfer capacitances(Typical: 13pF)
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of PC POWER.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS
EAR a1
IAR a1
dv/dt a2
PD
VESD(G-S)
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
900
9
5.8
36
±30
1000
100
4.5
5.0
150
1.2
6000
150，–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
V
℃
℃
WUXI CHI NA RE SOURCES HUAJI NG MI CROELECTR ONI CS CO., LTD.
Page 1 of 10 2015V01
1 page  
A
CS9N90 ANHD
○R
WUXI CHI NA RESO UR CES HUAJI NG M ICROELECTRONI CS C O., LTD.
Page 5 of 10 2015V01
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CS9N90ANHD.PDF ] | |
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