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PDF CS12N60FA9R Data sheet ( Hoja de datos )

Número de pieza CS12N60FA9R
Descripción Silicon N-Channel Power MOSFET
Fabricantes Huajing Microelectronics 
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No Preview Available ! CS12N60FA9R Hoja de datos, Descripción, Manual

Silicon N-Channel Power MOSFET
CS12N60F A9R
R
General Description
CS12N60F A9R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features
l Fast Switching
l Low ON Resistance(Rdson0.75)
l Low Gate Charge (Typical Data:40nC)
l Low Reverse transfer capacitances(Typical:10pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD(TC=25)
RDS(ON)Typ
600
12
42
0.57
Rating
600
12
7.5
48
±30
670
5.0
42
0.34
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
V/ns
W
W/
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1

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CS12N60FA9R pdf
CS12N60F A9R
R
30
250us Pulse Test
25 VDS=20V
20
16
12
15
10 +25
+150
5
8
+150
+25
4
0
2468
Vgs , Gate to Source Voltage , Volts
Figure 6 Typical Transfer Characteristics
0.9
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25
0.8
0.7
VGS=10V
10
0.6
0.5
0 4 8 12
Id , Drain Current , Amps
Figure 8 Typical Drain to Source ON Resistance
vs Drain Current
16
0
0 0.2 0.4 0.6 0.8 1 1.2
Vsd , Source - Drain Voltage , Volts
Figure 7 Typical Body Diode Transfer Characteristics
2.5
2.25
2
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=3.5A
1.75
1.5
1.25
1
0.75
0.5
-50
0 50 100
Tj, Junction temperature , C
150
Figure 9 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 1 0 20 15V0 1

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