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Número de pieza | CS8N50FA9R | |
Descripción | Silicon N-Channel Power MOSFET | |
Fabricantes | Huajing Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CS8N50FA9R (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! Silicon N-Channel Power MOSFET
CS8N50F A9R
○R
General Description:
CS8N50F A9R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤0.9Ω)
l Low Gate Charge (Typical Data:24nC)
l Low Reverse transfer capacitances(Typical:7pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
dv/dt a3
PD
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
500
8
35
0.7
Rating
500
8
5
32
±30
440
5.0
35
0.28
150,–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1
1 page 21
250us Pulse Test
VDS=20V
14
7 +25℃
+150℃
CS8N50F A9R
16
12
8
+150℃
+25℃
4
○R
0
2468
Vgs , Gate to Source Voltage , Volts
Figure 6 Typical Transfer Characteristics
1.4
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25 ℃
1.2
1.0
VGS=10V
10
0.8
0.6
0246
Id , Drain Current , Amps
Figure 8 Typical Drain to Source ON Resistance
vs Drain Current
8
0
0 0.2 0.4 0.6 0.8 1 1.2
Vsd , Source - Drain Voltage , Volts
Figure 7 Typical Body Diode Transfer Characteristics
2.5
2.25
2
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=3.5A
1.75
1.5
1.25
1
0.75
0.5
-50
0 50 100
Tj, Junction temperature , C
150
Figure 9 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 1 0 20 15V0 1
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet CS8N50FA9R.PDF ] |
Número de pieza | Descripción | Fabricantes |
CS8N50FA9R | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
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