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PDF CS4N80A3HD Data sheet ( Hoja de datos )

Número de pieza CS4N80A3HD
Descripción Silicon N-Channel Power MOSFET
Fabricantes Huajing Microelectronics 
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Silicon N-Channel Power MOSFET
CS4N80 A3HD
R
General Description
CS4N80 A3HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-251, which accords with the RoHS standard.
Features
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data: 25nC)
l Low Reverse transfer capacitances(Typical:7.5pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
dv/dt a3
PD
VESD(G-S)
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD(TC=25)
RDS(ON)Typ
800
4
100
2.2
Rating
800
4
2.5
16
±30
230
5.0
100
0.8
4000
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
V/ns
W
W/
V
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1

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CS4N80A3HD pdf
CS4N80 A3HD
R
9
250us Pulse Test
7.5 VDS=20V
6
4.5
3 +25
+150
1.5
0
2468
Vgs , Gate to Source Voltage , Volts
Figure 6 Typical Transfer Characteristics
10
8
7
6
5
4
3 +150
+25
2
1
0
0 0.2 0.4 0.6 0.8 1 1.2
Vsd , Source - Drain Voltage , Volts
Figure 7 Typical Body Diode Transfer Characteristics
3.5
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25
3.1
2.7
VGS=10V
2.3
1.9
0123
Id , Drain Current , Amps
Figure 8 Typical Drain to Source ON Resistance
vs Drain Current
4
2.5
2.25
2
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=2A
1.75
1.5
1.25
1
0.75
0.5
-50
0 50 100
Tj, Junction temperature , C
150
Figure 9 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 1 0 20 15V0 1

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