|
|
PDF CS3205B8 Data sheet ( Hoja de datos )
| Número de pieza | CS3205B8 | |
| Descripción | Silicon N-Channel Power MOSFET | |
| Fabricantes | Huajing Microelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de CS3205B8 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
Silicon N-Channel Power MOSFET
CS3205 B8
○R
General Description：
CS3205 B8, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
switching performance and enhance the avalanche
energy. The transistor can be used in various power
switching circuit for system miniaturization and higher
efficiency. The package form is TO-220AB, which
accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤8.5mΩ)
l Low Gate Charge (Typical Data:74nC)
l Low Reverse transfer capacitances(Typical:68pF)
l 100% Single Pulse avalanche energy Test
55 V
120 A
230 W
7.6 mΩ
Applications：
Automotive、DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
55
120
84
390
±20
1200
120
4.9
5.0
230
1.53
175，–55 to 175
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pa g e 1 of 10 201 5V01
1 page  
1000
100
CS3205 B8
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
○R
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 − TC
125
VGS=10V
10
1.00E-05
1.00E-04
120
100
PULSE DURATION = 10μs
DUTY CYCLE = 0.5%MAX
VDS=30V
1.00E-03
1.00E-02
1.00E-01
t Pulse Width , Seconds
Figure 6 Maximum Peak Current Capability
0.011
0.010
1.00E+00
1.00E+01
ID=120A
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
80
0.009
ID=60A
ID=30A
60 0.008
ID=15A
40 +150℃
0.007
20
0
0
+25℃
-55℃
2468
Vgs , Gate to Source Voltage,Volts
Figure 7 Typical Transfer Characteristics
0.011
0.010
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25 ℃
0.006
0.005
10 4 6 8 10 12 14
Vgs , Gate to Source Voltage ,Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
2.75
2.5
2.25
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=60A
2
0.009
0.008
VGS=10V
VGS=20V
1.75
1.5
1.25
1
0.007
0.75
0.5
0.006
0
25
Figure
50 75 100 125 150 175
Id , Drain Current , Amps
9 Typical Drain to Source ON Resistance
vs Drain Current
200
0.25
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction tem perature , C
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 10 201 5V01
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CS3205B8.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| CS3205B8 | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |