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Número de pieza | CS3205A8 | |
Descripción | Silicon N-Channel Power MOSFET | |
Fabricantes | Huajing Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CS3205A8 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! Silicon N-Channel Power MOSFET
CS3205 A8
○R
General Description:
CS3205A8, the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce
the conduction loss, improve switching performance and
enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package form is TO-220AB, which
accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤8mΩ)
l Low Gate Charge (Typical Data:75nC)
l Low Reverse transfer capacitances(Typical:75pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa2
VGS
EAS a3
dv/dt a4
PD
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD (TC=25℃)
RDS(ON)Typ
60
120
230
7
Rating
60
120 a1
84
480
±20
1300
3
230
1.4
175,–55 to 175
300
V
A
W
mΩ
Units
V
A
A
A
V
mJ
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1
1 page CS3205 A8
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WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 1 0 20 15V0 1
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet CS3205A8.PDF ] |
Número de pieza | Descripción | Fabricantes |
CS3205A8 | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
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