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PDF CS540A8 Data sheet ( Hoja de datos )
| Número de pieza | CS540A8 | |
| Descripción | Silicon N-Channel Power MOSFET | |
| Fabricantes | Huajing Microelectronics | |
| Logotipo |  |
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Silicon N-Channel Power MOSFET
CS540 A8
○R
General Description：
CS540 A8, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
100
33
150
30
switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit
for system miniaturization and higher efficiency. The package
form is TO-220AB, which accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤44 mΩ)
l Low Gate Charge (Typical Data:37nC)
l Low Reverse transfer capacitances(Typical:10pF)
l 100% Single Pulse avalanche energy Test
Applications：
Automotive、DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
100
33
27
132
±20
750
60
3.5
5.0
150
1.0
175，–55 to 175
300
V
A
W
mΩ
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pa g e 1 of 10 201 5V01
1 page  
CS540 A8
○R
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 10 201 5V01
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CS540A8.PDF ] | |
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