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PDF CS25N06B4 Data sheet ( Hoja de datos )
| Número de pieza | CS25N06B4 | |
| Descripción | Silicon N-Channel Power MOSFET | |
| Fabricantes | Huajing Microelectronics | |
| Logotipo |  |
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Silicon N-Channel Power MOSFET
CS25N06 B4
○R
General Description：
CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce
the conduction loss, improve switching performance and
enhance the avalanche energy. The transistor can be used in
variou power switching circuit for system miniaturization and
higher efficiency. The package form is TO-252, which accords
with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤36 mΩ)
l Low Gate Charge (Typical Data:13nC)
l Low Reverse transfer capacitances(Typical:87pF)
l 100% Single Pulse avalanche energy Test
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
60 V
25 A
50 W
28 mΩ
Applications：
Automotive、DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1
VGS
dv/dt a2
PD
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
60
25
18
80
±20
5.0
50
0.33
175，–55 to 175
300
Units
V
A
A
A
V
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1
1 page  
CS25N06 B4
○R
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 1 0 20 15V0 1
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CS25N06B4.PDF ] | |
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