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Número de pieza | CS60N06C4 | |
Descripción | Silicon N-Channel Power MOSFET | |
Fabricantes | Huajing Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CS60N06C4 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! Silicon N-Channel Power MOSFET
CS60N06 C4
○R
General Description:
CS60N06 C4, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-252, which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤10mΩ)
l Low Gate Charge (Typical Data: 57nC)
l Low Reverse transfer capacitances(Typical: 180pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
60
55
150
8
Rating
60
55
42
220
±20
320
30
2.5
3.0
85
0.57
175,–55 to 175
300
V
A
W
mΩ
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1
1 page CS60N06 C4
○R
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 1 0 20 15V0 1
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet CS60N06C4.PDF ] |
Número de pieza | Descripción | Fabricantes |
CS60N06C4 | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
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