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Número de pieza | CS3410BR | |
Descripción | Silicon N-Channel Power MOSFET | |
Fabricantes | Huajing Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CS3410BR (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! Silicon N-Channel Power MOSFET
CS3410 BR
○R
General Description:
CS3410 BR, the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce the
conduction loss, improve switching performance and enhance the
avalanche energy. The transistor can be used in various power
switching circuit for system miniaturization and higher efficiency. The
package form is TO-262, which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤0.1Ω)
l Low Gate Charge (Typical Data:20nC)
l Low Reverse transfer capacitances(Typical:100PF)
l 100% Single Pulse avalanche energy Test
Applications:
Circuit of switching DC/DC converters and DC motor
control.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD (TC=25℃)
RDS(ON)Typ
100
17
80
0.075
V
A
W
Ω
Rating
100
17
12
68
±20
500
50
3.2
5
80
0.53
175,–55 to 175
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 1 of 10 2015V01
1 page 1000
100
CS3410 BR
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
○R
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 − TC
125
10
1.00E-05
1.00E-04
100
PULSE DURATION = 250μs
VDS=45V
1.00E-03
Figure 6
1.00E-02
1.00E-01
t ,Pulse Width , Seconds
Maximum Peak Current Capability
0.3
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
10 0.2
1 +150℃ 0.1
+25℃
ID= 17A
ID= 8.5A
ID= 4.25A
ID= 2.125A
-55℃
0.1
2
Figure
468
Vgs , Gate to Source Voltage , Volts
7 Typical Transfer Characteristics
0.3
Tc =25 ℃
0.24
0
10 4 6 8 10 12 14
Vgs , Gate to Source Voltage , Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
2.5
VGS=10V ID=8.5A
2
0.18 1.5
VGS=10V
0.12 1
0.06
VGS=20V
0.5
0
0 10
Figure 9
20 30 40 50 60
Id , Drain Current , Amps
Typical Drain to Source ON Resistance
vs Drain Current
70
0
-100
-50
Figure 10
0 50 100 150 200
Tj, Junction temperature , C
Typical Drian to Source on Resistance
vs Junction Temperature
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 5 of 10 2015V01
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet CS3410BR.PDF ] |
Número de pieza | Descripción | Fabricantes |
CS3410B3 | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
CS3410B4 | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
CS3410BR | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
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