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PDF BGF120A Data sheet ( Hoja de datos )
| Número de pieza | BGF120A | |
| Descripción | Transient Voltage Suppressor Diodes | |
| Fabricantes | Infineon | |
| Logotipo |  |
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TVS Diodes
Transient Voltage Suppressor Diodes
BGF120A
Dual Channel Ultra-Low Capacitance ESD Diode
Datasheet
Rev. 1.4, 2012-09-17
Final
Power Management & Multimarket
1 page  
2 Electrical Characteristics
BGF120A
Electrical Characteristics
Table 2-1 Maximum Ratings TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Operating temperature range
Storage temperature range
Contact discharge1)
1) VESD according to IEC61000-4-2
TOP
TSTG
VESD
Min.
-40
-65
-
Typ.
-
-
-
Max.
+125
+150
18
Unit
°C
°C
kV
Note /
Test Condition
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Table 2-2 DC Electrical Characteristics TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Reverse working voltage
Breakdown voltage
Reverse current
VRWM
VBR
IR
Min.
-
6
-
Typ.
-
-
<1
Max.
5.3
-
50
V
V
nA
Note /
Test Condition
IBR = 1 mA
VR = 5.3V
Table 2-3 DC Electrical Characteristics TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Line capacitance1)
A1 or A2 to B1/B2
A1 to A2, B1/B2 n.c.
Min. Typ. Max.
CL pF
- - 1.5
- - 0.75
Series inductance per diode
1) Total capacitance line to ground
LS
- 0.25 - nH
Note /
Test Condition
VR = 0 V, f = 1 MHz
Final Datasheet
5 Rev. 1.4, 2012-09-17
5 Page 
BGF120A
Application and Signal Routing
4 Application and Signal Routing
Application example for high-speed data line protection (uni-directional)
This low parasitic capacitance dual channel TVS diode array can be used either in a 2 channel uni-directional
configuration or in a single channel bi-directional configuration. Due to the low capacitance and low inductance
the configurations are perfect fit for ultra high-speed interfaces, such as USB2.0/3.0, S-ATA, DVI or HDMI ports.
Signal level: 0 … +5.3V
A1 A2
B1 B2
ESD
sensitive
circuit
The protection diode
should be placed very
close to the location
where the ESD or other
transients can occur to
keep loops and
inductances as small
as possible. Pin B1, B2
should be directly
connected to a ground
plane on the board.
Figure 4-1 Application example for high-speed data line protection (uni-directional)
Application example for RF antenna line (bi-directional)
Connecting pin A1(A2) to the signal line and A2(A1) to GND and leaving pin B1/B2 floating even further reduces
the parasitics to 0.75 pF only and correspondingly enable the user to add reliable ESD protection to RF antennas
in e.g. GPS, FM radio or mobile TV applications without influence of the RF circuitry.
Signal level: -5.3V … +5.3V
A1 B1
A2 B2
ESD
sensitive
circuit
Pin A1 (or A2) should be
directly connected to the RF
signal line and A2 (or A1)
should be connected
directly to a ground plane
on the board.
B1, B2 should be not
connected.
Figure 4-2 Application example for RF antenna line (bi-directional)
Final Datasheet
11 Rev. 1.4, 2012-09-17
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet BGF120A.PDF ] | |
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